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|標題:||Characterization of thin-film electroluminescent devices with multiple Ta2O5 interlayers incorporated into SrS : Pr,Ce phosphor||作者:||Horng, R.H.
|關鍵字:||thin-film electroluminescent device;Ta2O5;interlayers;SrS : Pr,Ce;extra thermal-cycle;stacked structure||Project:||Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers||期刊/報告no：:||Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Volume 36, Issue 12A, Page(s) 7245-7249.||摘要:||
A thin-film electroluminescent device (ELD) has been fabricated by incorporating multiple Ta2O5 interlayers into the SrS:Pr,Ce phosphor layer using rf-magnetron sputtering. X-ray measurement results confirm the enhanced crystallinity of the phosphor layer and can be explained by the extra thermal-cycle annealing due to the different deposition temperatures for Ta2O5 (100 degrees C) and SrS (500 degrees C). The inclusion of thin barrier alms is expected to redistribute the internal field and introduce additional interface states in the ELD structure. Based on the results of Sawyer-Tower circuit measurements, it is found that the transferred charge density in the active layer can increase with the number of intermediate layers. This contributes to an increase in brightness and the reduction of the threshold voltage. Moreover, a stacked structure for SrS:Pr and SrS:Ce phosphor layers with window effects is proposed to alleviate the absorption problem in the SrS:Pr,Ce multi-barrier ELD structure. Details of the mechanism and the improvement in the chromaticity will also be described.
|Appears in Collections:||材料科學與工程學系|
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