Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43237
標題: GaN/mirror/Si light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques
作者: Wuu, D.S.
洪瑞華
Hsu, S.C.
Huang, S.H.
Wu, C.C.
Lee, C.E.
Horng, R.H.
武東星
關鍵字: GaN;Si substrate;laser lift-off;wafer bonding;vertical conductance;light-emitting diodes;heterostructures;films;nm
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Volume 43, Issue 8A, Page(s) 5239-5242.
摘要: 
A p-side-up GaN/mirror/Si light-emitting diode (LED) for vertical current injection has been fabricated by laser lift-off and wafer bonding techniques. A variety of metallic mirrors (Au, Al, and Ag) were chosen to improve the optical reflectivity and contact resistance with n-GaN. The GaN/mirror/Si LED with a silver mirror achieved a maximum luminance intensity of 45 mcd (20 mA) with a low forward voltage of 3.5 V. This luminance intensity is over two times that of the original planar GaN/sapphire LED. Under high current injection, the GaN/mirror(Ag)/Si LED also showed a more stable emission wavelength than the planar GaN/sapphire LED. This can be explained by the fact that the Si substrate provides a good heat sink and alleviates the joule heating problem. On the basis of these results, the p-side-up structure confirms the possibility of the simultaneous realization of a lower contact resistance and higher reflectivity for GaN/mirror/Si LEDs.
URI: http://hdl.handle.net/11455/43237
ISSN: 0021-4922
DOI: 10.1143/jjap.43.5239
Appears in Collections:材料科學與工程學系

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