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標題: | Effect of nitrogen addition on the properties and thermal stability of fluorinate amorphous carbon films | 作者: | Lai, C.H. 張守一 Lai, W.S. Chiue, H.C. Chen, H.J. Chang, S.Y. Lin, S.J. |
關鍵字: | carbon;flourinated carbon;chemical vapor deposition;mechanical;properties;thermal stability;nitrogeneration;low-dielectric-constant;chemical-vapor-deposition;thin-films;structural modifications;interlayer dielectrics;low-k;polymerization;interconnections;discharges;mechanisms | Project: | Thin Solid Films | 期刊/報告no:: | Thin Solid Films, Volume 510, Issue 1-2, Page(s) 125-133. | 摘要: | Continuous fluorinated amorphous carbon (a-C: F) films doped with nitrogen (a-C: F: N) were deposited by plasma enhanced chemical vapor deposition using CF4 and C2H2 gases as precursors with the addition of N-2 gas. The surface morphologies, chemical compositions, deposition rates, thermal stability and mechanical properties of these films varied with the deposition parameters, including CF4 and N-2 feed gas concentrations, processing pressure, plasma power and substrate temperature. With increasing N-2 feed gas concentration, the nitrogen content of the a-C:F:N films increased to about 6 at.% and contributed to higher mechanical properties. After thermal annealing, the a-C: F films with higher fluorine contents exhibited more obvious fluorine release and extensive film thickness shrinkage, whereas the a-C:F:N films with higher contents of nitrogen doping yielded less composition variations, smaller thickness shrinkages, higher mechanical properties, and conclusively better thermal stability. (c) 2005 Elsevier B.V. All rights reserved. |
URI: | http://hdl.handle.net/11455/43252 | ISSN: | 0040-6090 | DOI: | 10.1016/j.tsf.2005.12.274 |
Appears in Collections: | 材料科學與工程學系 |
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