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|標題:||Effect of nitrogen addition on the properties and thermal stability of fluorinate amorphous carbon films||作者:||Lai, C.H.
|關鍵字:||carbon;flourinated carbon;chemical vapor deposition;mechanical;properties;thermal stability;nitrogeneration;low-dielectric-constant;chemical-vapor-deposition;thin-films;structural modifications;interlayer dielectrics;low-k;polymerization;interconnections;discharges;mechanisms||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 510, Issue 1-2, Page(s) 125-133.||摘要:||
Continuous fluorinated amorphous carbon (a-C: F) films doped with nitrogen (a-C: F: N) were deposited by plasma enhanced chemical vapor deposition using CF4 and C2H2 gases as precursors with the addition of N-2 gas. The surface morphologies, chemical compositions, deposition rates, thermal stability and mechanical properties of these films varied with the deposition parameters, including CF4 and N-2 feed gas concentrations, processing pressure, plasma power and substrate temperature. With increasing N-2 feed gas concentration, the nitrogen content of the a-C:F:N films increased to about 6 at.% and contributed to higher mechanical properties. After thermal annealing, the a-C: F films with higher fluorine contents exhibited more obvious fluorine release and extensive film thickness shrinkage, whereas the a-C:F:N films with higher contents of nitrogen doping yielded less composition variations, smaller thickness shrinkages, higher mechanical properties, and conclusively better thermal stability. (c) 2005 Elsevier B.V. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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