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標題: Effect of nitrogen addition on the properties and thermal stability of fluorinate amorphous carbon films
作者: Lai, C.H.
Lai, W.S.
Chiue, H.C.
Chen, H.J.
Chang, S.Y.
Lin, S.J.
關鍵字: carbon;flourinated carbon;chemical vapor deposition;mechanical;properties;thermal stability;nitrogeneration;low-dielectric-constant;chemical-vapor-deposition;thin-films;structural modifications;interlayer dielectrics;low-k;polymerization;interconnections;discharges;mechanisms
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 510, Issue 1-2, Page(s) 125-133.
Continuous fluorinated amorphous carbon (a-C: F) films doped with nitrogen (a-C: F: N) were deposited by plasma enhanced chemical vapor deposition using CF4 and C2H2 gases as precursors with the addition of N-2 gas. The surface morphologies, chemical compositions, deposition rates, thermal stability and mechanical properties of these films varied with the deposition parameters, including CF4 and N-2 feed gas concentrations, processing pressure, plasma power and substrate temperature. With increasing N-2 feed gas concentration, the nitrogen content of the a-C:F:N films increased to about 6 at.% and contributed to higher mechanical properties. After thermal annealing, the a-C: F films with higher fluorine contents exhibited more obvious fluorine release and extensive film thickness shrinkage, whereas the a-C:F:N films with higher contents of nitrogen doping yielded less composition variations, smaller thickness shrinkages, higher mechanical properties, and conclusively better thermal stability. (c) 2005 Elsevier B.V. All rights reserved.
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.12.274
Appears in Collections:材料科學與工程學系

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