Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43254
標題: High thermal stability of AlCrTaTiZr nitride film as diffusion barrier for copper metallization
作者: Chang, S.Y.
張守一
Chen, M.K.
關鍵字: Interconnect;Nitride;Diffusion barrier;Thermal stability;entropy alloy system;multiprincipal elements;cu metallization;performance
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 517, Issue 17, Page(s) 4961-4965.
摘要: 
To inhibit rapid Cu diffusion in interconnect structures. an effective diffusion barrier layer with high thermal stability, low electrical resistivity and good interface adhesion is strongly demanded. Thus in this study, an amorphous nitride film of equimolar AlCrTaTiZr alloy with an N content of about 41 at.% was deposited by reactive radio-frequency magnetron sputtering. Thermal stability of the AlCrTaTiZr nitride film and its barrier property to Cu diffusion were investigated under thermal annealing at 700-900 degrees C. The AlCrTaTiZr nitride film remained an amorphous structure after thermal annealing at 700 degrees C and then crystallized at 800 degrees C. However, no interdiffusion between Si substrate and Cu metallization through the AlCrTaTiZr nitride film occurred. The electrical resistivity of the film remained at the low level of as-deposited value, indicating its good thermal stability as an effective diffusion barrier layer. With temperature further increasing to 900 degrees C, severe interdiffusion occurred, along with the formation of silicides and large pores. The electrical resistivity then significantly increased, implying the failure of the AlCrTaTiZr nitride film. (c) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43254
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.03.078
Appears in Collections:材料科學與工程學系

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