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|標題:||Nickel-induced crystallization of amorphous Ge film for blue-ray recording under thermal annealing and pulsed laser irradiation||作者:||Her, Y.C.
|關鍵字:||cu/a-si bilayer;kinetics;germanium||Project:||Journal of Applied Physics||期刊/報告no：:||Journal of Applied Physics, Volume 106, Issue 2.||摘要:||
The crystallization kinetics of a-Ge thin film induced by a thin Ni layer under thermal annealing and pulsed laser irradiation has been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Ge in the a-Ge/Ni bilayer recording film were significantly reduced to 385 degrees C and 2.4 eV, respectively, due to the fast Ge diffusion in the already formed germanide phases. The reaction exponent m of similar to 1.7 for the a-Ge/Ni bilayer corresponds to a crystallization process in which grain growth occurs with nucleation and the nucleation rate decreases with the progress of the grain growth process. Under pulsed laser irradiation, the maximum data-transfer rates of 22, 56, 74, and 112 Mbits/s can be achieved in the write-once blue-ray disk at the recording powers of 3, 4, 5, and 6 mW, respectively. (C) 2009 American Institute of Physics. [DOI:10.1063/1.3183956]
|Appears in Collections:||材料科學與工程學系|
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