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|標題:||Influences of oxygen impurity contained in nitrogen gas on the reactions of chromium with nitrogen||作者:||Ho, Y.S.
|關鍵字:||high-temperature oxidation;nitride films;crn films;coatings;morphology;behavior;kinetics||Project:||Journal of Materials Research||期刊/報告no：:||Journal of Materials Research, Volume 20, Issue 10, Page(s) 2745-2753.||摘要:||
In this research, the influences of the oxygen impurity contained in the commercially available nitrogen gas on the reactions of chromium pellets with nitrogen were investigated in the temperature range 600-1350 degrees C. A small amount of oxygen competed with the majority N-2 to react with chromium in the annealing process. Analyzing the in situ oxygen partial pressure changes during annealing proved that the dissolution of oxygen in Cr and/or resultant CrxN (CrN or Cr2N) was exothermic and the solubility decreased with increasing temperature. It was found that the oxygen partial pressure decreased drastically to about 10(-22) atm when specimens were annealed at 600 degrees C compared to a mere 10(-5) atm for a blank test, while its value increased with temperature. The oxidation involved simultaneous dissolution of oxygen in specimens and formation of oxide scale. Moreover, comparing the aforementioned results with those obtained from additional annealing experiments preformed in argon gas showed that the formation of Cr2O3 might stem mainly from oxidation of the resultant nitrides instead of the metallic chromium.
|Appears in Collections:||材料科學與工程學系|
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