Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43400
標題: Monte Carlo simulation of atoms diffusion via vacancies in fcc-structured nanofilms
作者: Chieh, Y.C.
呂福興
Lu, F.H.
關鍵字: nanostructures;thin films;defects;diffusion;computer-simulation;impurity diffusion;concentrated alloy;tracer;diffusion;cation diffusion;range order;long-range
Project: Journal of Physics and Chemistry of Solids
期刊/報告no:: Journal of Physics and Chemistry of Solids, Volume 69, Issue 2-3, Page(s) 315-319.
摘要: 
This research focuses on the Monte Carlo simulation of the correlation factor of atoms diffusing via vacancies in nanofilms with a face-centered cubic (fee) crystal lattice. The thickness of the films, defined as the number of crystal lattices along the axis perpendicular to the film surface, and the average number of jumps per atom (NJPA) are key variables in the simulation. Different jump frequency ratios of surface and interior atom-vacancy exchanges were also varied to investigate their influences on the correlation factor. The correlation factor of atoms approaches 0.781 when the film thickness is sufficiently large, which agrees well with the value for the 3D fee bulk lattice. As the film thickness is reduced to a minimum, the factor converges to 0.467, a value for the 2D square lattice. Abrupt change of the correlation factor occurs at a few numbers of lattices, i.e., in the nanofilm regime, which is mainly due to the confinement of atoms to nanofilms and could also be analyzed mathematically. (C) 2007 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/43400
ISSN: 0022-3697
DOI: 10.1016/j.jpcs.2007.07.025
Appears in Collections:材料科學與工程學系

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