Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43403
標題: Oxidation behavior of AIN films at high temperature under controlled atmosphere
作者: Lin, C.Y.
呂福興
Lu, F.H.
關鍵字: AIN;thin films;oxidation;Al2O3;phase changes;microstructure;aln thin-films;aluminum nitride;kinetics;degradation;substrate
Project: Journal of the European Ceramic Society
期刊/報告no:: Journal of the European Ceramic Society, Volume 28, Issue 3, Page(s) 691-698.
摘要: 
Oxidation behavior of AIN films deposited on Si substrates by unbalanced magnetron sputtering was investigated over temperatures of 700-1200 degrees C in different atmospheres by analyzing changes in appearance and crystalline phases, as well as microstructures. The atmospheres contained air, nitrogen, and forming gas (N-2/H-2 = 9), which exhibited drastically different nitrogen/oxygen partial pressure ratios. Observed color changes in appearance were associated with oxidation of the nitride film, which was analyzed by exploring Gibbs free-energy changes at various temperatures and nitrogen/oxygen partial pressures. Different phases of oxidants including intermediate 8-Al2O3 and thermodynamically stable alpha-Al2O3 were discerned by X-ray diffraction. Oxidation of AIN and phase transformation in Al2O3 depended on not only the temperature but the nitrogen/oxygen partial pressures. Microstructures of both oxide phases could be resolved by micro-Raman spectroscopy. (c) 2007 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/43403
ISSN: 0955-2219
DOI: 10.1016/j.jeurceramsoc.2007.07.015
Appears in Collections:材料科學與工程學系

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