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|dc.description.abstract||The oxidation behavior of titanium nitride (TiN) films has been investigated by using x-ray diffraction, Raman scattering spectroscopy, and field emission scanning electron microscopy. TiN films were deposited onto Si substrates by using cathodic arc plasma deposition technique. After that, the films were annealed in the air at 500-800 degrees C for 2 h. The x-ray diffraction spectra showed that rutile-TiO2 appeared above 600 degrees C. The relative intensity of TiO2 rapidly increased with temperatures. Only rutile-TiO2 was detected above 700 degrees C. Raman scattering spectra indicated the presence of rutile-TiO2 signals above 500 degrees C. Meanwhile an additional Si peak appeared at 700 degrees C in Raman spectra, above which only Si peak appeared. Many nano pores were found on the surface of films annealed at temperatures between 600 and 700 degrees C in field emission scanning electron microscopy, while the granular structure existed at 800 degrees C. The as-deposited TiN films had an apparent columnar structure. The thin and dense oxide overlayer appeared at 500 degrees C, and thicker oxide layer existed above 600 degrees C. The elongated grain structure with many voids existed in the film at 800 degrees C. These pores-voids might result from the nitrogen release during the oxidation of the nitride. The oxide layer obviously grows inward indicating the oxidation of TiN films belongs to an inward oxidation. The pre-exponential factor and the activation energy of the oxidation were evaluated by Arrhenius-type relation. These values were 2.2 X 10(-6) cm(2)/s and 110 +/- 10 kJ/mol, which are consistent with those reports in the literature. (c) 2005 American Vacuum Society.||en_US|
|dc.relation||Journal of Vacuum Science & Technology A||en_US|
|dc.relation.ispartofseries||Journal of Vacuum Science & Technology A, Volume 23, Issue 4, Page(s) 1006-1009.||en_US|
|dc.title||Oxidation behavior of titanium nitride films||en_US|
|Appears in Collections:||材料科學與工程學系|
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