Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43426
標題: Characterization of titanium nitride films deposited by cathodic are plasma technique on copper substrates
作者: Lu, F.H.
呂福興
Chen, H.Y.
關鍵字: titanium nitride;copper;plasma vapor deposition;X-ray diffraction;Auger electron spectroscopy;X-ray photoelectron spectroscopy;ray photoelectron-spectroscopy;tin thin-films;preferred orientation;low-temperature;strain-energy;oxidation;coatings;spectra;surface
Project: Surface & Coatings Technology
期刊/報告no:: Surface & Coatings Technology, Volume 130, Issue 2-3, Page(s) 290-296.
摘要: 
TiN films were deposited directly on Cu substrates by a cathodic are plasma deposition technique. The films were then characterized by X-ray diffraction (XRD), grazing incidence X-ray diffraction (GID), (TEM), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). The preferred orientation of the film changed from (200) to (111) with increasing film thickness. Analyses of both the XRD and GID results showed that in the highly (111) textured grains, the (111) plane was approximately parallel to the film surface, while in the (200) textured grains, the (300) plane was tilted away from the film surface. Small-elongated crystallites with a large aspect ratio and textured grains were found on the TIN surface. AES, which was employed to examine the concentration depth profile, showed no apparent interdiffusion between Cu and TIN during the growth of the him. XPS results showed that amorphous TiO2, as well as titanium oxynitride, was present on the TiN surface. The spectra of Ti-2p, N-1s, O-1s and Cu-2p before and after the him being sputter etched through the entire film region were also discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
URI: http://hdl.handle.net/11455/43426
ISSN: 0257-8972
DOI: 10.1016/s0257-8972(00)00710-6
Appears in Collections:材料科學與工程學系

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