Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43437
標題: Preparation of titanium oxynitride thin films by reactive sputtering using air/Ar mixtures
作者: Chan, M.H.
呂福興
Lu, F.H.
關鍵字: Titanium oxynitride;Air;Magnetron sputtering;High base pressure;coatings;temperature;deposition;resistors;surface;xps
Project: Surface & Coatings Technology
期刊/報告no:: Surface & Coatings Technology, Volume 203, Issue 5-7, Page(s) 614-618.
摘要: 
In the literature titanium oxynitride (TiN(x)O(y)) films have often been prepared by controlling N(2)/O(2)/Ar mixing gases in physical vapor deposition. in this study, TiNxOy films were prepared by d.c. magnetron sputtering using air/Ar mixtures. Replacing N(2)/O(2) with air as a reactive gas allowed the process performed at high base pressures, i.e., low vacuum, which could drastically reduce processing time while achieving similar quality of the films prepared at a low base pressure. When the air/Ar flow ratio increased from 0.15 to 0.30, the color of the films changed from light golden to dark golden and X-ray diffraction patterns show that the preferred Orientation of films with rock-salt Structure changed from (111) into (200). The oxygen content in the TiN(x)O(y) films increased with increasing the air/Ar ratio, as determined by X-ray photoelectron spectroscopy. The thickness of the films decreased with increasing the air/Ar ratio, revealing the target poisoning effect especially at high air/Ar ratios. Electrical resistivities of the films increased with the ratio owing to the increase of oxygen content in the films. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43437
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2008.04.094
Appears in Collections:材料科學與工程學系

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