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|標題:||Preparation of titanium oxynitride thin films by reactive sputtering using air/Ar mixtures||作者:||Chan, M.H.
|關鍵字:||Titanium oxynitride;Air;Magnetron sputtering;High base pressure;coatings;temperature;deposition;resistors;surface;xps||Project:||Surface & Coatings Technology||期刊/報告no：:||Surface & Coatings Technology, Volume 203, Issue 5-7, Page(s) 614-618.||摘要:||
In the literature titanium oxynitride (TiN(x)O(y)) films have often been prepared by controlling N(2)/O(2)/Ar mixing gases in physical vapor deposition. in this study, TiNxOy films were prepared by d.c. magnetron sputtering using air/Ar mixtures. Replacing N(2)/O(2) with air as a reactive gas allowed the process performed at high base pressures, i.e., low vacuum, which could drastically reduce processing time while achieving similar quality of the films prepared at a low base pressure. When the air/Ar flow ratio increased from 0.15 to 0.30, the color of the films changed from light golden to dark golden and X-ray diffraction patterns show that the preferred Orientation of films with rock-salt Structure changed from (111) into (200). The oxygen content in the TiN(x)O(y) films increased with increasing the air/Ar ratio, as determined by X-ray photoelectron spectroscopy. The thickness of the films decreased with increasing the air/Ar ratio, revealing the target poisoning effect especially at high air/Ar ratios. Electrical resistivities of the films increased with the ratio owing to the increase of oxygen content in the films. (C) 2008 Elsevier B.V. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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