Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43446
標題: Oxidation behavior of chromium nitride films
作者: Chen, H.Y.
呂福興
Lu, F.H.
關鍵字: oxidation;nitrides;X-ray diffraction;scanning electron microscopy;high-temperature oxidation;raman-spectroscopy;hard coatings;crn;films;tin/crn;tin
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 515, Issue 4, Page(s) 2179-2184.
摘要: 
Chromium nitride (CrN) films were deposited onto (100) silicon using a commercially available cathodic arc plasma deposition system. Oxidation of the films was conducted in air at temperatures ranging from 650 to 850 degrees C for 2 h. X-ray diffraction spectra revealed that Cr(2)O(3) diffraction peaks appeared above 650 degrees C and the relative integrated intensity of the oxide increased gradually with temperatures. Moreover, five vibration bands associated with Cr(2)O(3) were discerned in Raman spectra above this temperature. Nano-granular structure showed up at 650 degrees C, while abnormal grain growth resulting from the grain coalescence occurred above 800 degrees C. A thin dense oxide overlayer was present at 650 degrees C and the oxide thickness increased gradually with temperatures. Meanwhile, underneath CrN grains grew drastically above 700 degrees C and became more equiaxially-grained at 850 degrees C. The pre-exponential factor and activation energy of oxidation for CrN films were evaluated by analyzing the Arrhenius relation from the temperature dependence of oxide thickness. The obtained values were 1.3 x 10(-8) cm(2)/s and 110 +/- 6 kJ/mol, respectively, which is comparable to the literature data. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43446
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.06.039
Appears in Collections:材料科學與工程學系

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