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標題: | Correlating antiferromagnetic spin structures with ion-beam bombardment in exchange-biased NiFe/Mn bilayers | 作者: | Lin, K.W. 林克偉 Chen, T.J. Guo, J.Y. Ouyang, H. Wei, D.H. van Lierop, J. |
關鍵字: | magnetization reversal;films | Project: | Journal of Applied Physics | 期刊/報告no:: | Journal of Applied Physics, Volume 105, Issue 7. | 摘要: | The correlation between the ion-beam bombardment and the exchange bias magnetism in NiFe (10 nm)/Mn (25 nm) bilayers was studied. While the bottom Mn layers bombarded by different Ar ion-beam energies (V(EH) from 70 to 150 V) retained the same structure, significant differences in exchange bias were observed when in contact with a top NiFe layer. The dependence of the exchange bias field, H(ex), with increasing V(EH) suggests strongly that the Ar ion-beam bombardment process may create uncompensated Mn spins (H(ex) enhancement) or increase the spin misalignment in ferromagnet (FM)/antiferromagnet (AF) interfaces (H(ex) decrease), depending on the energy used. A schematic FM/AF spin structure was proposed to explain this unusual exchange bias behavior. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3063661] |
URI: | http://hdl.handle.net/11455/43499 | ISSN: | 0021-8979 | DOI: | 10.1063/1.3063661 |
Appears in Collections: | 材料科學與工程學系 |
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