Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43515
標題: Blue light-emitting diodes with a roughened backside fabricated by wet etching
作者: Lin, C.F.
林佳鋒
Lin, C.M.
Chen, K.T.
Huang, W.C.
Lin, M.S.
Dai, J.J.
Jiang, R.H.
Huang, Y.C.
Chang, C.Y.
關鍵字: buffer layers;etching;gallium compounds;III-V semiconductors;indium;compounds;laser materials processing;light emitting diodes;rough;surfaces;wide band gap semiconductors;gan;sidewall;nitride;surface;output
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 95, Issue 20.
摘要: 
The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser decomposition, laser scribing, and a lateral crystallographic wet etching process at the GaN/Al(2)O(3) interface, stable crystallographic etching planes were formed as the GaN {1011} planes that included an angle with the top GaN (0001) plane measured at 58 degrees. The GaN buffer layer acted as the sacrificial layer for the laser decomposition process and the lateral wet etching process with a 26 mu m/min etching rate. The LED with the inverted pyramidal N-face GaN surface close to the GaN/Al(2)O(3) interface has a larger light-scattering process than the conventional LED. The light-output power of the LED with the backside roughened surface had a 47% enhancement when measured in LED chip form.
URI: http://hdl.handle.net/11455/43515
ISSN: 0003-6951
DOI: 10.1063/1.3262968
Appears in Collections:材料科學與工程學系

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.