Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43529
標題: Hydrogenated amorphous silicon-germanium thin films with a narrow band gap for silicon-based solar cells
作者: Wang, C.C.
Liu, C.Y.
Lien, S.Y.
Weng, K.W.
Huang, J.J.
Chen, C.F.
Wuu, D.S.
關鍵字: Solar cell;a-Si(x)Ge(1-x):H;VHF-PECVD;Thin films;Ge contents;alloys;discharge;dilution;si
Project: Current Applied Physics
期刊/報告no:: Current Applied Physics, Volume 11, Issue 1, Page(s) S50-S53.
摘要: 
Hydrogenated amorphous siliconegermanium (a-Si(x)Ge(1-x):H) thin films were grown using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD, 27.13 MHz). The films were used in a silicon-based thin film solar cell. The films were grown from a gas mixture of silane (SiH(4)) and tunable germane (GeH(4)) gas that was diluted in hydrogen (H(2)). The results show that the optical band gap (E(g)), optical adsorption coefficient (alpha), grain size and chemical composition depend on the germane contents of the films. The relationships among optical properties, structural properties, and chemical structural features were characterized by UV-visible spectroscopy (UV-vis), scanning electron microscopy (SEM), X-ray photoelectron spectrometer (XPS), and Raman spectroscopy. a-Si(x)Ge(1-x):H solar cells with an efficiency of 5.59% were obtained the films. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43529
ISSN: 1567-1739
DOI: 10.1016/j.cap.2010.11.003
Appears in Collections:材料科學與工程學系

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