Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43530
標題: Wet mesa etching process in InGaN-based light emitting diodes
作者: Yang, C.C.
武東星
Lin, C.F.
Jiang, R.H.
Liu, H.C.
Lin, C.M.
Chang, C.Y.
Wuu, D.S.
Kuo, H.C.
Wang, S.C.
關鍵字: n-type gan;quantum-wells;p-gan;surfaces
Project: Electrochemical and Solid State Letters
期刊/報告no:: Electrochemical and Solid State Letters, Volume 11, Issue 7, Page(s) H169-H172.
摘要: 
A photoelectrochemical wet mesa etching (WME) process was used to fabricate InGaN-based light emitting diodes (LEDs) as a substitute for the conventional plasma mesa dry etching process. The p-type GaN:Mg layer, InGaN active layer, and n-type GaN:Si layer were etched through a sequential photoelectrochemical oxidation and oxide-removing process to define the mesa region. The higher lateral wet-etching rate (similar to 3.4 mu m/h) of the InGaN active layer was observed to form a wider undercut structure which has 42.7% light output power enhancement compared to a conventional LED fabricated with the plasma dry etching process. The reverse current of a WME-LED was suppressed by avoiding plasma damage during the dry mesa etching process. (C) 2008 The Electrochemical Society.
URI: http://hdl.handle.net/11455/43530
ISSN: 1099-0062
DOI: 10.1149/1.2908196
Appears in Collections:材料科學與工程學系

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.