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|標題:||Wet mesa etching process in InGaN-based light emitting diodes||作者:||Yang, C.C.
|關鍵字:||n-type gan;quantum-wells;p-gan;surfaces||Project:||Electrochemical and Solid State Letters||期刊/報告no：:||Electrochemical and Solid State Letters, Volume 11, Issue 7, Page(s) H169-H172.||摘要:||
A photoelectrochemical wet mesa etching (WME) process was used to fabricate InGaN-based light emitting diodes (LEDs) as a substitute for the conventional plasma mesa dry etching process. The p-type GaN:Mg layer, InGaN active layer, and n-type GaN:Si layer were etched through a sequential photoelectrochemical oxidation and oxide-removing process to define the mesa region. The higher lateral wet-etching rate (similar to 3.4 mu m/h) of the InGaN active layer was observed to form a wider undercut structure which has 42.7% light output power enhancement compared to a conventional LED fabricated with the plasma dry etching process. The reverse current of a WME-LED was suppressed by avoiding plasma damage during the dry mesa etching process. (C) 2008 The Electrochemical Society.
|Appears in Collections:||材料科學與工程學系|
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