Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43532
標題: Improved Output Power of 380 nm InGaN-Based LEDs Using a Heavily Mg-Doped GaN Insertion Layer Technique
作者: Huang, S.C.
武東星
Wuu, D.S.
Wu, P.Y.
Chan, S.H.
關鍵字: Metalorganic chemical vapor deposition;threading dislocation;UV LEDs;light emitting diode;epitaxial gan
Project: Ieee Journal of Selected Topics in Quantum Electronics
期刊/報告no:: Ieee Journal of Selected Topics in Quantum Electronics, Volume 15, Issue 4, Page(s) 1132-1136.
摘要: 
High-performance InGaN-based 380 nm UV LEDs are fabricated by using a heavily Mg-doped GaN insertion layer (HD-IL) technique. Based on the transmission electronmicroscopy, etch pit density, and cathodoluminescence results, the HD-IL technique can substantially reduce the defect density of GaN layer. The double-crystal X-ray diffraction results are in good agreement with those observations. The internal quantum efficiency of LED sample with an HD-IL shows around 40% improvement compared with the LED sample without the use of HD-IL. When the vertical-type LED chips (size: 1 mm x 1 mm) are driven by a 350 mA current, the output powers of the LEDs with and without an HD-IL are measured to be 203.4 and 158.9 mW, respectively. As much as 28% increased light output power is achieved.
URI: http://hdl.handle.net/11455/43532
ISSN: 1077-260X
DOI: 10.1109/jstqe.2009.2014778
Appears in Collections:材料科學與工程學系

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