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|標題:||Improved Output Power of 380 nm InGaN-Based LEDs Using a Heavily Mg-Doped GaN Insertion Layer Technique||作者:||Huang, S.C.
|關鍵字:||Metalorganic chemical vapor deposition;threading dislocation;UV LEDs;light emitting diode;epitaxial gan||Project:||Ieee Journal of Selected Topics in Quantum Electronics||期刊/報告no：:||Ieee Journal of Selected Topics in Quantum Electronics, Volume 15, Issue 4, Page(s) 1132-1136.||摘要:||
High-performance InGaN-based 380 nm UV LEDs are fabricated by using a heavily Mg-doped GaN insertion layer (HD-IL) technique. Based on the transmission electronmicroscopy, etch pit density, and cathodoluminescence results, the HD-IL technique can substantially reduce the defect density of GaN layer. The double-crystal X-ray diffraction results are in good agreement with those observations. The internal quantum efficiency of LED sample with an HD-IL shows around 40% improvement compared with the LED sample without the use of HD-IL. When the vertical-type LED chips (size: 1 mm x 1 mm) are driven by a 350 mA current, the output powers of the LEDs with and without an HD-IL are measured to be 203.4 and 158.9 mW, respectively. As much as 28% increased light output power is achieved.
|Appears in Collections:||材料科學與工程學系|
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