Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43533
標題: Study on Hydrogen Ion-Implanted Characteristic of Thin-Film Green Resonant-Cavity Light-Emitting Diodes
作者: Huang, S.Y.
武東星
Horng, R.H.
Tseng, P.H.
Tu, J.H.
Tu, L.W.
Wuu, D.S.
關鍵字: Hydrogen-ion implantation;InGaN;resonant-cavity light-emitting diode;(RCLED);microcavity;emission;leds
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 22, Issue 6, Page(s) 404-406.
摘要: 
This letter investigates the effects of hydrogen ion implantation on the characteristics of InGaN-based green resonantcavity light-emitting diodes (RCLEDs). RCLEDs with ion implantation were fabricated by implanting hydrogen ion (H(+)) in a selective area. The implanted region was used to form current-confinement layers due to an existing deep-level (similar to 512 nm, 2.4 eV). Superior directionality was also obtained because the selective area of p-GaN layer of RCLEDs with ion implantation provided a low refractive index. The light emission enhancement was due to the high current density increasing and the total reflection of the emission ray. The electroluminescence spectrum exhibited narrow fullwidth at half-maximum of 45 nm for the RCLEDs with ion implantation. The fiber-coupled power of RCLEDs with H implantation was 2.2 times greater than that of a similar structure without H implantation at an injection current of 20 mA.
URI: http://hdl.handle.net/11455/43533
ISSN: 1041-1135
DOI: 10.1109/lpt.2010.2040777
Appears in Collections:材料科學與工程學系

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