Study on Hydrogen Ion-Implanted Characteristic of Thin-Film Green Resonant-Cavity Light-Emitting Diodes

Abstract

This letter investigates the effects of hydrogen ion implantation on the characteristics of InGaN-based green resonantcavity light-emitting diodes (RCLEDs). RCLEDs with ion implantation were fabricated by implanting hydrogen ion (H(+)) in a selective area. The implanted region was used to form current-confinement layers due to an existing deep-level (similar to 512 nm, 2.4 eV). Superior directionality was also obtained because the selective area of p-GaN layer of RCLEDs with ion implantation provided a low refractive index. The light emission enhancement was due to the high current density increasing and the total reflection of the emission ray. The electroluminescence spectrum exhibited narrow fullwidth at half-maximum of 45 nm for the RCLEDs with ion implantation. The fiber-coupled power of RCLEDs with H implantation was 2.2 times greater than that of a similar structure without H implantation at an injection current of 20 mA.