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標題: Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells
作者: Lin, Y.S.
Lien, S.Y.
Wang, C.C.
Hsu, C.H.
Yang, C.H.
Nautiyal, A.
Wuu, D.S.
Tsai, P.C.
Lee, S.J.
Project: International Journal of Photoenergy
期刊/報告no:: International Journal of Photoenergy.
The amorphous silicon/amorphous silicon (a-Si/a-Si) tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p(+) recombination layer and i(2)/i(1) thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (V(oc)) of 1.59 V, short-circuit current density (J(sc)) of 7.96 mA/cm(2), and a fill factor (FF) of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p(+) recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.
ISSN: 1110-662X
DOI: 10.1155/2011/264709
Appears in Collections:材料科學與工程學系

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