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|標題:||Improved output power of 400-nm InGaN/AlGaN LEDs using a novel surface roughening technique||作者:||Huang, S.C.
|關鍵字:||Surface;Metalorganic chemical vapor deposition;Nitrides;Light;emitting diodes;light-emitting-diodes;gan-based leds;mqw leds;ingan;efficiency;layers||Project:||Journal of Crystal Growth||期刊/報告no：:||Journal of Crystal Growth, Volume 311, Issue 3, Page(s) 867-870.||摘要:||
Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) with three kinds of naturally textured surfaces were grown by atmosphere-pressure metalorganic chemical vapor deposition. The electroluminescence intensities of the 400-nm LED bare chips with nano-hole and micro-island textured morphologies show 30% and 40%. in magnitude higher than that of the flat surface LED sample. Both textured surfaces greatly increased the escape probability of photons inside the LED structure. A naturally coral like surface was developed for the near-UV LED, where the textured p-GaN layer was fabricated using the successive growth of the micro-island followed by the nano-hole p-GaN layers. As much as 31.6% increased light Output power of the coral-like textured LED was achieved using this novel surface roughening technique. (C) 2008 Elsevier B.V. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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