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標題: | Improved output power of 400-nm InGaN/AlGaN LEDs using a novel surface roughening technique | 作者: | Huang, S.C. 武東星 Wuu, D.S. Wu, P.Y. Lin, W.Y. Tu, P.M. Yeh, Y.C. Hsu, C.P. Chan, S.H. |
關鍵字: | Surface;Metalorganic chemical vapor deposition;Nitrides;Light;emitting diodes;light-emitting-diodes;gan-based leds;mqw leds;ingan;efficiency;layers | Project: | Journal of Crystal Growth | 期刊/報告no:: | Journal of Crystal Growth, Volume 311, Issue 3, Page(s) 867-870. | 摘要: | Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) with three kinds of naturally textured surfaces were grown by atmosphere-pressure metalorganic chemical vapor deposition. The electroluminescence intensities of the 400-nm LED bare chips with nano-hole and micro-island textured morphologies show 30% and 40%. in magnitude higher than that of the flat surface LED sample. Both textured surfaces greatly increased the escape probability of photons inside the LED structure. A naturally coral like surface was developed for the near-UV LED, where the textured p-GaN layer was fabricated using the successive growth of the micro-island followed by the nano-hole p-GaN layers. As much as 31.6% increased light Output power of the coral-like textured LED was achieved using this novel surface roughening technique. (C) 2008 Elsevier B.V. All rights reserved. |
URI: | http://hdl.handle.net/11455/43537 | ISSN: | 0022-0248 | DOI: | 10.1016/j.jcrysgro.2008.09.104 |
Appears in Collections: | 材料科學與工程學系 |
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