Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43538
標題: Transparent Barrier Coatings on High Temperature Resisting Polymer Substrates for Flexible Electronic Applications
作者: Wuu, D.S.
武東星
Chen, T.N.
Lay, E.
Liu, C.H.
Chang, C.H.
Wei, H.F.
Jiang, L.Y.
Lee, H.U.
Chang, Y.Y.
關鍵字: etching;glass transition;noncrystalline defects;organic compounds;plasma CVD;plasma CVD coatings;polymers;silicon compounds;thin films;chemical-vapor-deposition;light-emitting devices;films;durability;permeation;mechanisms
Project: Journal of the Electrochemical Society
期刊/報告no:: Journal of the Electrochemical Society, Volume 157, Issue 2, Page(s) C47-C51.
摘要: 
Silicon nitride (SiN(x)) and parylene thin films were deposited onto flexible polyimide (PI) substrates using plasma-enhanced chemical vapor deposition and a parylene reactor for transparent barrier applications. The PI substrates from the Industry Technology Research Institute with high optical transmittance and high glass transition temperature were used. A relatively high growth temperature of 200 degrees C was chosen to deposit the SiN(x) films. To characterize the SiN(x) films deposited under different growth temperatures, a wet-etching process was performed to visualize the defect distribution in the barrier films. After 120 min of etching, the etching area ratio decreased from 44.9 to 6.7%, while the average defect spacing increased from 125 to 450 mu m with increasing growth temperature. Under room temperature and relative humidity of 50%, four SiN(x)/parylene stacks with the SiN(x) films deposited at 80 and 200 degrees C were demonstrated to decrease the water vapor transmission rate to 7.9x10(-4) and 7.41x10(-6) g/m(2)/day, respectively. As a result, ultralow permeation can be achieved with less repeating barrier stacks by using high temperature deposited SiN(x) films in the barrier structures.
URI: http://hdl.handle.net/11455/43538
ISSN: 0013-4651
DOI: 10.1149/1.3261761
Appears in Collections:材料科學與工程學系

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