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|標題:||Simulation and Fabrication of Heterojunction Silicon Solar Cells from Numerical Computer and Hot-Wire CVD||作者:||Lien, S.Y.
|關鍵字:||silicon;heterojunction;solar cell;Pc1D simulation;chemical-vapor-deposition;crystalline silicon;polycrystalline silicon;si films;layer||Project:||Progress in Photovoltaics||期刊/報告no：:||Progress in Photovoltaics, Volume 17, Issue 7, Page(s) 489-501.||摘要:||
In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter-layer/intritisic-layer/crystalline-Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization of n-type microcrystalline silicon (n-mu c-Si)/intrinsic amorphous silicon (i-a-Si)/crystalline silicon (c-Si) heterojunction solar cells from Pc1D is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on mu c-Si (n)/ a-Si (i)/c-Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: tile best results for J(sc) = 39.4 mA/cm(2), V(oc) = 0.64V, FF = 83%, and n = 21% have been achieved. After optimizing the deposition parameters of the n-layer and the H(2) pretreatment of solar cell, the single-side HJ solar cells with J(sc) = 34.6 mA/cm(2) V(oc) = 0.615 V, FF = 71% and an efficiency of 15.2% have been achieved. The double-side HJ solar cell with J(sc) = 34.8 mA/cm(2) V(oc) = 0.645 V, FF = 73%, and an efficiency of 16.4% has been fabricated. Copyright (C) 2009 John Wiley & Sons, Ltd.
|Appears in Collections:||材料科學與工程學系|
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