Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43544
標題: Characterization of the silicon oxide thin films deposited on polyethylene terephthalate substrates by radio frequency reactive magnetron sputtering
作者: Lin, M.C.
武東星
Tseng, C.H.
Chang, L.S.
Wuu, D.S.
關鍵字: silicon oxide;sputtering;polyethylene terephthalate (PET);gas;transmission rate;chemical-vapor-deposition;gas barrier properties;coatings;sio2;permeation
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 515, Issue 11, Page(s) 4596-4602.
摘要: 
Transparent silicon oxide films were deposited on polyethylene terephthalate substrates by means of reactive magnetron sputtering with a mixture of argon and oxygen gases. The influences of process parameters, including the oxygen flow ratio, work pressure, radio frequency (RF) power density and deposition time, on the film properties, such as: deposition rate, morphology, surface roughness, water vapor/oxygen transmission rate and flexibility, were investigated. The experimental results show that the SiOx films deposited at RF power density of 4.9 W/cm(2), work pressure of 0.27 Pa and oxygen flow ratio of 40% have better performance in preventing the permeation of water vapor and oxygen. Cracks are produced in the SiOx films after the flexion of more than 100 cycles. The minimum transmission rates of water vapor and oxygen were found to be 2.6 g/m(2) day atm and 15.4 cc/m(2) day atm, respectively. (c) 2006 Elsevier B.V All rights reserved.
URI: http://hdl.handle.net/11455/43544
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.11.039
Appears in Collections:材料科學與工程學系

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