Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43544
DC FieldValueLanguage
dc.contributor.authorLin, M.C.en_US
dc.contributor.author武東星zh_TW
dc.contributor.authorTseng, C.H.en_US
dc.contributor.authorChang, L.S.en_US
dc.contributor.authorWuu, D.S.en_US
dc.date2007zh_TW
dc.date.accessioned2014-06-06T08:11:05Z-
dc.date.available2014-06-06T08:11:05Z-
dc.identifier.issn0040-6090zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43544-
dc.description.abstractTransparent silicon oxide films were deposited on polyethylene terephthalate substrates by means of reactive magnetron sputtering with a mixture of argon and oxygen gases. The influences of process parameters, including the oxygen flow ratio, work pressure, radio frequency (RF) power density and deposition time, on the film properties, such as: deposition rate, morphology, surface roughness, water vapor/oxygen transmission rate and flexibility, were investigated. The experimental results show that the SiOx films deposited at RF power density of 4.9 W/cm(2), work pressure of 0.27 Pa and oxygen flow ratio of 40% have better performance in preventing the permeation of water vapor and oxygen. Cracks are produced in the SiOx films after the flexion of more than 100 cycles. The minimum transmission rates of water vapor and oxygen were found to be 2.6 g/m(2) day atm and 15.4 cc/m(2) day atm, respectively. (c) 2006 Elsevier B.V All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationThin Solid Filmsen_US
dc.relation.ispartofseriesThin Solid Films, Volume 515, Issue 11, Page(s) 4596-4602.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2006.11.039en_US
dc.subjectsilicon oxideen_US
dc.subjectsputteringen_US
dc.subjectpolyethylene terephthalate (PET)en_US
dc.subjectgasen_US
dc.subjecttransmission rateen_US
dc.subjectchemical-vapor-depositionen_US
dc.subjectgas barrier propertiesen_US
dc.subjectcoatingsen_US
dc.subjectsio2en_US
dc.subjectpermeationen_US
dc.titleCharacterization of the silicon oxide thin films deposited on polyethylene terephthalate substrates by radio frequency reactive magnetron sputteringen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.tsf.2006.11.039zh_TW
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
Appears in Collections:材料科學與工程學系
Show simple item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.