Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43549
標題: Simultaneous recrystallization, phosphorous diffusion and antireflection coating of silicon films using laser treatment
作者: Lien, S.Y.
武東星
Wu, B.R.
Mao, H.Y.
Wang, J.H.
Hsieh, I.C.
Yao, P.C.
Wuu, D.S.
關鍵字: silicon;doping;recrystallization;antireflection coating;solar-cells;amorphous-silicon;microcrystalline;performance;deposition
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 496, Issue 2, Page(s) 643-648.
摘要: 
Laser technique application to polycrystalline silicon thin-film solar cell fabrication on glass substrates has received appreciable attention. In this paper, a laser-doping technique is developed for plasma-deposited amorphous silicon film. A process involving recrystallization, phosphorous diffusion and antireflection coating can be achieved simultaneously using the laser annealing process. The doping precursor, a phosphorous-doped titanium dioxide (TiO2) solution, is synthesized using a sol-gel method and spin-coated onto the sample. After laser irradiation, the polycrystalline silicon grain size was about 0.5 similar to 1.0 mu m with a carrier concentration of 2 x 10(19) cm(-3) and electron mobility of 92.6 cm(2)/V s. The average polycrystalline silicon reflectance can be reduced to a value of 4.65% at wavelengths between 400 and 700 nm, indicating the upper TiO2, film of antireflection coating. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43549
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.08.311
Appears in Collections:材料科學與工程學系

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