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|標題:||Atomic-scale observation on the nucleation and growth of displacement-activated palladium catalysts and electroless copper plating||作者:||Lai, C.H.
|關鍵字:||electrochemical deposition;titanium nitride;layer deposition;barrier;layers;cu deposition;metallization;diffusion;integration;films||Project:||Electrochemical and Solid State Letters||期刊/報告no：:||Electrochemical and Solid State Letters, Volume 8, Issue 8, Page(s) C114-C116.||摘要:||
The atomic-scale crystallographic structures of displacement-activated palladium (Pd) catalysts and electrolessly plated copper (Cu) films have been investigated in this research to clarify their nucleation and growth mechanisms at an early stage. Following the orientations of tantalum nitride (TaN) substrate, the Pd nanocrystallites were found to preferentially nucleate at the TaN/Pd interface with an orientational relationship of Pd close to TaN, and then constructed polycrystalline clusters. Subsequently deposited Cu nanocrystallites exhibited similar orientations to the adjacent Pd grains with two relationships of Cu close to Pd and , and then grew into a random polycrystalline structure. (c) 2005 The Electrochemical Society.
|Appears in Collections:||材料科學與工程學系|
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