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|標題:||Early-stage nucleation crystallography of sensitization-activated palladium catalysts and electrolessly deposited copper films||作者:||Sung, Y.C.
|關鍵字:||ultralarge-scale integration;electrochemical deposition;titanium;nitride;barrier layers;cu deposition;metallization;interconnections;growth||Project:||Electrochemical and Solid State Letters||期刊/報告no：:||Electrochemical and Solid State Letters, Volume 9, Issue 5, Page(s) C85-C87.||摘要:||
The atomic-scale crystallography of early-stage nucleation of sensitization-activated palladium (Pd) catalysts and electrolessly plated copper (Cu) films has been investigated. Small Pd nanocrystallites of 5-10 nm were uniformly distributed as a single layer. Neighboring Pd nanocrystallites exhibited similar crystallography irrelevant to the random orientations of polycrystalline TaN substrate. Subsequently deposited Cu nanocrystallites of only 1 nm with small-angle boundaries nucleated on the Pd nanocrystallites with an orientation relationship of Cu  parallel to Pd . In comparison, displacement-activated Pd preferentially nucleated on TaN, and Cu followed the orientation of Pd grains with a relationship of Cu  parallel to Pd . (c) 2006 The Electrochemical Society.
|Appears in Collections:||材料科學與工程學系|
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