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|標題:||Multiprincipal-Element AlCrTaTiZr-Nitride Nanocomposite Film of Extremely High Thermal Stability as Diffusion Barrier for Cu Metallization||作者:||Chang, S.Y.
|關鍵字:||entropy alloy system;copper diffusion;thin ta;performance;tin;si;microstructure;layers||Project:||Journal of the Electrochemical Society||期刊/報告no：:||Journal of the Electrochemical Society, Volume 156, Issue 5, Page(s) G37-G42.||摘要:||
To inhibit rapid Cu diffusion in interconnect structures, an effective diffusion barrier of high thermal stability is strongly demanded. Thus in this study a nitride nanocomposite film of equimolar five-element high-entropy alloy (AlCrTaTiZr)N was developed and deposited by reactive sputtering. Thermal stability of the (AlCrTaTiZr)N film and its barrier performance to the interdiffusion of Si and Cu were investigated under thermal annealing at 700-900 degrees C. The (AlCrTaTiZr)N film, constructed of mixed crystalline and amorphous nanocomposite structure, was found to remain thermally stable at an extremely high temperature of 900 degrees C with low electrical resistance. Neither interdiffusion between Si and Cu through the (AlCrTaTiZr)N layer nor formation of any silicides occurred. Severe lattice distortions caused by the addition of multiprincipal elements and the nanocomposite structure of nanocrystallites surrounded by an amorphous matrix without the existence of grain boundaries were expected as the dominant factors for the high thermal stability and superior diffusion resistance of the (AlCrTaTiZr)N film as an effective barrier material. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3097186] All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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