Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43637
標題: Fabrication of the selective-growth ZnO nanorods with a hole-array pattern on a p-type GaN/Mg layer through a chemical bath deposition process
作者: Lin, M.S.
張守一
Chen, C.C.
Wang, W.C.
Lin, C.F.
Chang, S.Y.
林佳鋒
關鍵字: GaN;Light-emitting diodes (LED);ZnO nanorods (ZNR);Chemical bath;deposition (CBD);light-emitting-diodes;aqueous-solution;thin-films;morphology;nanowires;devices;output
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 518, Issue 24, Page(s) 7398-7402.
摘要: 
ZnO nanorod arrays were effectively selective-grown on a p-type GaN:Mg layer through chemical bath deposition (CBD) at a low temperature hydrothermal synthesis (85 degrees C) with a ZnO seed layer. The 5 mu m-diameter hole-array patterns of the ZnO seed layer were grown on a p-type GaN:Mg layer in aqueous solution with a mercury lamp illumination. The diameter and the height of ZnO nanorods were measured as the values of 500 nm and 3 mu m, respectively. The growth orientation, surface morphology, and aspect ratio of the ZnO nanorods can be controlled and formed on the hole-array patterned ZnO seed layer. The peak wavelength of the photoluminescence spectrum was measured at 384 nm. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43637
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.05.017
Appears in Collections:材料科學與工程學系

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