Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43639
標題: Structural Properties of Iron Silicide Nanostructures Grown by Reactive Deposition Epitaxy
作者: Hsu, H.F.
許薰丰
Wu, H.Y.
Huang, Y.T.
Chen, T.H.
關鍵字: beam-synthesized beta-fesi2;light-emitting diode;mu-m;si substrate;electroluminescence;photoluminescence;films;aggregation;fesi2
Project: Japanese Journal of Applied Physics
期刊/報告no:: Japanese Journal of Applied Physics, Volume 48, Issue 8.
摘要: 
Iron silicide particles were grown on Si(100) by reactive deposition epitaxy. By maintaining the thickness of the deposited Fe down to 2 nm, silicide particles with diameters of less than 100 nrn were formed on Si(I 00) substrates. Type B FeSi(CsCI) or gamma-FeSi(2) nanoparticles and a few beta-FeSi(2) nanoparticles were formed at 500 degrees C. Type A and B gamma-FeSi(2), alpha-FeSi(2), and beta-FeSi(2) nanoparticles coexisted in the samples deposited at 600 degrees C. The alpha-FeSi(2) phase was predominant in the sample that was deposited at 700 degrees C. Among these iron silicide nanoparticles, alpha-FeSi(2) and beta-FeSi(2) nanoparticles tended to protrude out of the Si substrate and FeSi(CsCI) and gamma-FeSi(2) nanoparticles preferred to embed in the Si substrate. The mechanism of the formation of a faceted nanoparticle was discussed on the basis of the minimization of total surface energy. (C) 2009 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/43639
ISSN: 0021-4922
DOI: 10.1143/jjap.48.08jb09
Appears in Collections:材料科學與工程學系

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