Please use this identifier to cite or link to this item:
|標題:||Structural Properties of Iron Silicide Nanostructures Grown by Reactive Deposition Epitaxy||作者:||Hsu, H.F.
|關鍵字:||beam-synthesized beta-fesi2;light-emitting diode;mu-m;si substrate;electroluminescence;photoluminescence;films;aggregation;fesi2||Project:||Japanese Journal of Applied Physics||期刊/報告no：:||Japanese Journal of Applied Physics, Volume 48, Issue 8.||摘要:||
Iron silicide particles were grown on Si(100) by reactive deposition epitaxy. By maintaining the thickness of the deposited Fe down to 2 nm, silicide particles with diameters of less than 100 nrn were formed on Si(I 00) substrates. Type B FeSi(CsCI) or gamma-FeSi(2) nanoparticles and a few beta-FeSi(2) nanoparticles were formed at 500 degrees C. Type A and B gamma-FeSi(2), alpha-FeSi(2), and beta-FeSi(2) nanoparticles coexisted in the samples deposited at 600 degrees C. The alpha-FeSi(2) phase was predominant in the sample that was deposited at 700 degrees C. Among these iron silicide nanoparticles, alpha-FeSi(2) and beta-FeSi(2) nanoparticles tended to protrude out of the Si substrate and FeSi(CsCI) and gamma-FeSi(2) nanoparticles preferred to embed in the Si substrate. The mechanism of the formation of a faceted nanoparticle was discussed on the basis of the minimization of total surface energy. (C) 2009 The Japan Society of Applied Physics
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.