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標題: | Structural Properties of Iron Silicide Nanostructures Grown by Reactive Deposition Epitaxy | 作者: | Hsu, H.F. 許薰丰 Wu, H.Y. Huang, Y.T. Chen, T.H. |
關鍵字: | beam-synthesized beta-fesi2;light-emitting diode;mu-m;si substrate;electroluminescence;photoluminescence;films;aggregation;fesi2 | Project: | Japanese Journal of Applied Physics | 期刊/報告no:: | Japanese Journal of Applied Physics, Volume 48, Issue 8. | 摘要: | Iron silicide particles were grown on Si(100) by reactive deposition epitaxy. By maintaining the thickness of the deposited Fe down to 2 nm, silicide particles with diameters of less than 100 nrn were formed on Si(I 00) substrates. Type B FeSi(CsCI) or gamma-FeSi(2) nanoparticles and a few beta-FeSi(2) nanoparticles were formed at 500 degrees C. Type A and B gamma-FeSi(2), alpha-FeSi(2), and beta-FeSi(2) nanoparticles coexisted in the samples deposited at 600 degrees C. The alpha-FeSi(2) phase was predominant in the sample that was deposited at 700 degrees C. Among these iron silicide nanoparticles, alpha-FeSi(2) and beta-FeSi(2) nanoparticles tended to protrude out of the Si substrate and FeSi(CsCI) and gamma-FeSi(2) nanoparticles preferred to embed in the Si substrate. The mechanism of the formation of a faceted nanoparticle was discussed on the basis of the minimization of total surface energy. (C) 2009 The Japan Society of Applied Physics |
URI: | http://hdl.handle.net/11455/43639 | ISSN: | 0021-4922 | DOI: | 10.1143/jjap.48.08jb09 |
Appears in Collections: | 材料科學與工程學系 |
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