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|標題:||Effect of P addition on the thermal stability and electrical characteristics of NiSi films||作者:||Hsu, H.F.
|關鍵字:||Electroless deposition;Silicide;Thermal stability;nickel silicides;thin;interlayer;silicon;deposition;(111)si;phase||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 518, Issue 5, Page(s) 1538-1542.||摘要:||
Immersion Ni-P deposition is undoubtedly one of the most important catalytic deposition process, due to its simplicity in operation and low equipment cost. In this study, immersion deposited Ni-P films were used to form Ni-silicide films. Ni-P films with a thickness of 100 nm were fabricated by immersing Si(100) substrates in an aqueous deposition solution. Ni-silicide films were then formed by annealing the samples in a furnace at temperatures ranging from 400 degrees C to 900 degrees C for 1 h in an argon ambient. Experimental results indicate that a phosphor addition in Ni films increased the transformation temperature of NiSi to NiSi(2) to 900 degrees C. Moreover, the feasibility of enhancing the thermal stability of NiSi by varying the interface energy at the NiSi(2)/Si interface and the surface energy of a Ni-P-Si capping layer on the NiSi surface is discussed. (C) 2009 Elsevier B.V. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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