Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43650
標題: Effects of humidity on nano-oxidation of silicon nitride thin film
作者: Hsu, H.F.
許薰丰
Lee, C.W.
關鍵字: atomic force microscopy;oxidation;silicon nitride;kinetics;humidity;scanned probe oxidation;atomic-force microscope;growth-rate;enhancement;thermal-oxidation;local oxidation;dry oxygen;fabrication;kinetics;nanofabrication;surface
Project: Ultramicroscopy
期刊/報告no:: Ultramicroscopy, Volume 108, Issue 10, Page(s) 1076-1080.
摘要: 
Effects Of humidity on nanometer-scale oxidation of silicon nitride thin film using atomic force microscope in contact mode are studied at various Values of relative humidity (RH) (30-70%). The shape of oxide protrusion is determined by the concentration of oxyanions under the tip apex and oxyanions diffusion laterally on the surface. At low RH (<= 60%), the kinetics of silicon nitride oxidation has a logarithmic relationship to oxide height versus oxidation time. The threshold time decreased and initial oxidation rate increased simultaneously as humidity increased because a high concentration of oxyanions at the oxide/silicon nitride interface was generated. When a high sample voltage (9-10V) is applied at high RH (>= 60%), the effective electric field is decreased because of the electron being trapped in the oxide and oxyanions accumulating on the oxide surface. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43650
ISSN: 0304-3991
DOI: 10.1016/j.ultramic.2008.04.025
Appears in Collections:材料科學與工程學系

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