Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43650
DC FieldValueLanguage
dc.contributor.authorHsu, H.F.en_US
dc.contributor.author許薰丰zh_TW
dc.contributor.authorLee, C.W.en_US
dc.date2008zh_TW
dc.date.accessioned2014-06-06T08:11:17Z-
dc.date.available2014-06-06T08:11:17Z-
dc.identifier.issn0304-3991zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43650-
dc.description.abstractEffects Of humidity on nanometer-scale oxidation of silicon nitride thin film using atomic force microscope in contact mode are studied at various Values of relative humidity (RH) (30-70%). The shape of oxide protrusion is determined by the concentration of oxyanions under the tip apex and oxyanions diffusion laterally on the surface. At low RH (<= 60%), the kinetics of silicon nitride oxidation has a logarithmic relationship to oxide height versus oxidation time. The threshold time decreased and initial oxidation rate increased simultaneously as humidity increased because a high concentration of oxyanions at the oxide/silicon nitride interface was generated. When a high sample voltage (9-10V) is applied at high RH (>= 60%), the effective electric field is decreased because of the electron being trapped in the oxide and oxyanions accumulating on the oxide surface. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationUltramicroscopyen_US
dc.relation.ispartofseriesUltramicroscopy, Volume 108, Issue 10, Page(s) 1076-1080.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.ultramic.2008.04.025en_US
dc.subjectatomic force microscopyen_US
dc.subjectoxidationen_US
dc.subjectsilicon nitrideen_US
dc.subjectkineticsen_US
dc.subjecthumidityen_US
dc.subjectscanned probe oxidationen_US
dc.subjectatomic-force microscopeen_US
dc.subjectgrowth-rateen_US
dc.subjectenhancementen_US
dc.subjectthermal-oxidationen_US
dc.subjectlocal oxidationen_US
dc.subjectdry oxygenen_US
dc.subjectfabricationen_US
dc.subjectkineticsen_US
dc.subjectnanofabricationen_US
dc.subjectsurfaceen_US
dc.titleEffects of humidity on nano-oxidation of silicon nitride thin filmen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.ultramic.2008.04.025zh_TW
item.grantfulltextnone-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
Appears in Collections:材料科學與工程學系
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