Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43725
DC FieldValueLanguage
dc.contributor.authorLin, C.Y.en_US
dc.contributor.author薛顯宗zh_TW
dc.contributor.authorShiue, S.T.en_US
dc.date2010zh_TW
dc.date.accessioned2014-06-06T08:11:26Z-
dc.date.available2014-06-06T08:11:26Z-
dc.identifier.issn0253-3839zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43725-
dc.description.abstractThis study deposits nitrogenated carbon (C:N) films on p-type silicon (p-Si) substrates to fabricate C:N/p-Si photovoltaic solar cells by thermal chemical vapor deposition. Pure acetylene and nitrogen were used as the precursor gases. The deposition temperatures were set to 720, 730, 740, and 750 degrees C. The chemical composition, microstructure, mechanical and electrical properties of C:N films prepared at different deposition temperatures were studied. The results show that when the deposition temperature is 730 degrees C, the C:N/p-Si photovoltaic solar cell has the best photovoltaic parameters, in which the open-circuit voltage, short-circuit current, fill factor, and conversion efficiency are 120 mV, 1.59 mA, 30.1%, and 0.06%, respectively. This preliminary result also shows that C:N films with large amounts of highly ordered graphite-like structures, high N doping content, and low electrical resistivity are suitable to fabricate C:N/p-Si photovoltaic solar cells.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of the Chinese Institute of Engineersen_US
dc.relation.ispartofseriesJournal of the Chinese Institute of Engineers, Volume 33, Issue 6, Page(s) 891-897.en_US
dc.relation.urihttp://dx.doi.org/10.1080/02533839.2010.9671677en_US
dc.subjectthermal chemical vapor depositionen_US
dc.subjectcarbonen_US
dc.subjectphotovoltaicen_US
dc.subjectsolar cellen_US
dc.subjecttetrahedral amorphous-carbonen_US
dc.subjecta-c-nen_US
dc.subjectthin-filmsen_US
dc.subjectsolar-cellsen_US
dc.subjecthydrogenen_US
dc.titleTHE EFFECTS OF DEPOSITION TEMPERATURES ON THE CHARACTERISTICS OF NITROGENATED CARBON FILMS DEPOSITED ON p-TYPE SILICON SUBSTRATES BY THERMAL CHEMICAL VAPOR DEPOSITIONen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1080/02533839.2010.9671677zh_TW
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypeJournal Article-
Appears in Collections:材料科學與工程學系
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