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|標題:||Effects of Substrate Orientation on the Photovoltaic Performance of InGaAs Solar Cells||作者:||Tseng, M.C.
|關鍵字:||In(0.16)Ga(0.84)As solar cells;miscut angles;p-i-n structure;growth;layers;gaas||Project:||Ieee Transactions on Electron Devices||期刊/報告no：:||Ieee Transactions on Electron Devices, Volume 57, Issue 9, Page(s) 2138-2143.||摘要:||
In(0.16)Ga(0.84)As solar cells grown on GaAs substrates with different miscut angles via metalorganic chemical vapor deposition were utilized to study the effect of substrate orientation on solar cell efficiency. A p-n In(0.16)Ga(0.84)As solar cell grown on a 2 degrees-off GaAs substrate exhibited better conversion efficiency than one grown on a 15 degrees-off GaAs substrate. The poor performance of the 15 degrees-off In(0.16)Ga(0.84)As solar cell could be attributed to the formation of high-density misfit dislocations through strain relaxation, thereby reducing the minority carrier lifetime. The conversion efficiency of a 15 degrees-off In(0.16)Ga(0.84)As solar cell was improved using a p-i-n structure. Using the p-i-n structure design, a 15 degrees-off In(0.16)Ga(0.84)As solar cell showed conversion efficiency close to or even better than that of a 2 degrees-off In(0.16)Ga(0.84)As solar cell with the same structure.
|Appears in Collections:||材料科學與工程學系|
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