Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43750
標題: Effects of Substrate Orientation on the Photovoltaic Performance of InGaAs Solar Cells
作者: Tseng, M.C.
洪瑞華
Horng, R.H.
Lin, S.N.
Wuu, D.S.
Wu, C.H.
Chao, C.K.
Yu, H.H.
武東星
關鍵字: In(0.16)Ga(0.84)As solar cells;miscut angles;p-i-n structure;growth;layers;gaas
Project: Ieee Transactions on Electron Devices
期刊/報告no:: Ieee Transactions on Electron Devices, Volume 57, Issue 9, Page(s) 2138-2143.
摘要: 
In(0.16)Ga(0.84)As solar cells grown on GaAs substrates with different miscut angles via metalorganic chemical vapor deposition were utilized to study the effect of substrate orientation on solar cell efficiency. A p-n In(0.16)Ga(0.84)As solar cell grown on a 2 degrees-off GaAs substrate exhibited better conversion efficiency than one grown on a 15 degrees-off GaAs substrate. The poor performance of the 15 degrees-off In(0.16)Ga(0.84)As solar cell could be attributed to the formation of high-density misfit dislocations through strain relaxation, thereby reducing the minority carrier lifetime. The conversion efficiency of a 15 degrees-off In(0.16)Ga(0.84)As solar cell was improved using a p-i-n structure. Using the p-i-n structure design, a 15 degrees-off In(0.16)Ga(0.84)As solar cell showed conversion efficiency close to or even better than that of a 2 degrees-off In(0.16)Ga(0.84)As solar cell with the same structure.
URI: http://hdl.handle.net/11455/43750
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2052397
Appears in Collections:材料科學與工程學系

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