Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43751
標題: Light Extraction Study on Thin-Film GaN Light-Emitting Diodes With Electrodes Covering by Wafer Bonding and Textured Surfaces
作者: Horng, R.H.
洪瑞華
Lu, Y.A.
Wuu, D.S.
武東星
關鍵字: Interdigitated imbedded electrodes (IIEs);light extraction efficiency;textured n-side-up GaN light-emitting diode (LED);efficiency;leds
Project: Ieee Transactions on Electron Devices
期刊/報告no:: Ieee Transactions on Electron Devices, Volume 57, Issue 10, Page(s) 2651-2654.
摘要: 
Textured n-side-up GaN LEDs with interdigitated imbedded electrodes (IIEs), high-reflection mirror, and double-side roughening on both p-GaN and undoped-GaN layers are investigated. The IIE structure can eliminate electrode shading. The epitaxial layers of the devices are grown on (0001) sapphire substrates by metal-organic chemical vapor deposition. The devices are subsequently fabricated with wafer bonding, laser lift off, and chemical dry/wet etching techniques. The n-side-up structure is useful for enhancing light extraction and increasing light output power. Luminance intensity performance (at 350-mA injection current) is 160% and 20% higher than those of the conventional structure and the p-side-up structure with high-reflection mirror on silicon substrate and with electrode shading, respectively. The performance of p-side-up glue bonding LED (at 350-mA injection current) is only 120% higher than the conventional structure. The light extraction efficiency of n-side-up thin-film LEDs is better than that of p-side-up thin-film LEDs.
URI: http://hdl.handle.net/11455/43751
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2059028
Appears in Collections:材料科學與工程學系

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