Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43752
標題: Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates
作者: Wang, W.K.
洪瑞華
Wuu, D.S.
Lin, S.H.
Huang, S.Y.
Wen, K.S.
Horng, R.H.
武東星
關鍵字: epitaxial growth;electron microscopy;X-ray diffraction;nlicrostructure;near-ultraviolet;high-power;gan
Project: Journal of Physics and Chemistry of Solids
期刊/報告no:: Journal of Physics and Chemistry of Solids, Volume 69, Issue 2-3, Page(s) 714-718.
摘要: 
The microstructure and electrical properties of the InGaN-based blue light-emitting diodes (LEDs) fabricated on patterned sapphire substrates (PSSs) with parallel grooves have been investigated. The PSS with parallel grooves (ridge: 2 pm; trench: 3 Pin) along the (11-20) direction were etched using an inductively coupled plasma etcher with different etching depths. From the transmission electron microscopy observation, the PSS was confirmed to be an efficient way to reduce the threading dislocation density in the GaN epilayer. The output power of the PSS LED (461 nm) showed 33% higher than that of the conventional LED. For a typical lamp-form PSS LED operating at an injection current of 20 mA, the output power and external quantum efficiency were measured to be 7.1 mW and 10.1%, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better reliability of the PSS LED performance was also observed. (C) 2007 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/43752
ISSN: 0022-3697
DOI: 10.1016/j.jpcs.2007.07.075
Appears in Collections:材料科學與工程學系

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