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|標題:||Electron-Beam and Sputter-Deposited Indium-Tin Oxide Omnidirectional Reflectors for High-Power Wafer-Bonded AlGaInP Light-Emitting Diodes||作者:||Hsu, S.C.
|關鍵字:||aluminium compounds;annealing;beryllium alloys;electrical;resistivity;electron beam deposition;gallium compounds;gold;gold;alloys;III-V semiconductors;indium compounds;light emitting diodes;light reflection;ohmic contacts;reflectivity;refractive index;rough;surfaces;silver;sputter deposition;surface morphology;thin films;vacuum deposition;ito thin-films;vapor-deposition;efficiency;microstructure;fabrication;contacts;layer||Project:||Journal of the Electrochemical Society||期刊/報告no：:||Journal of the Electrochemical Society, Volume 156, Issue 4, Page(s) H281-H284.||摘要:||
Performance variation of 1 mm(2) high-power wafer-bonded AlGaInP light-emitting diode (LED) with an emission wavelength of 630 nm induced by E-beam and sputter-deposited indium-tin oxide (ITO) films, one component of triple-layer omnidirectional reflectors (ODRs), has been investigated in detail. The entire ODRs consist of p-GaP, dispersive dot contacts of Au/AuBe/Au acting as ohmic contacts, an intermediate low-refractive index ITO, and a silver (Ag) layer. The results show that annealing under nitrogen atmosphere yields a much rougher surface for the E-beam evaporated ITO than that for the magnetron sputtered one, which leads to a lower reflectivity of the ITO/Ag system. A similar resistivity of the two ITO films after annealing confirms no influence on the current-voltage characteristics of the corresponding devices. The smoother surface morphology of the sputter-deposited ITO after annealing enhances the light output power of 18% as compared to the one with the E-beam evaporated ITO at 350 mA for the ITO ODR-based AlGaInP LEDs.
|Appears in Collections:||材料科學與工程學系|
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