Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43806
DC FieldValueLanguage
dc.contributor.authorWang, Fang-Hsingen_US
dc.contributor.authorChang, Hung-Pengen_US
dc.contributor.authorTseng, Chih-Chungen_US
dc.contributor.authorHuang, Chia-Chengen_US
dc.contributor.otherNational Chung Hsing University,Department of Electrical Engineeringen_US
dc.contributor.other國立中興大學電機工程學系zh_TW
dc.date2011-9zh_TW
dc.date.accessioned2014-06-06T08:11:32Z-
dc.date.available2014-06-06T08:11:32Z-
dc.identifier.issn0257-8972zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43806-
dc.description.abstractAl-doped ZnO (AZO) thin films were prepared on glass substrates by radio-frequency magnetron sputtering at deposition temperatures ranging from room temperature (RT) to 300 C for transparent electrode applications. This study investigates the effects of H2 plasma treatment on structural, electrical, and optical properties of AZO thin films. Plasma treatment was conducted at 300 C using a plasma-enhanced chemical vapor deposition system for potential large size substrate applications. The crystal structure of plasma treated AZO films did not change considerably, but the surface roughness and surface grain size increased slightly. Improvement in electrical properties was strongly dependent on the deposition temperature. When the deposition temperature ranged from 300 C to RT, the resistivity of plasma treated films decreased significantly by 22.7% to 97.6%, and the optical bandgap broadened by 0.011 to 0.076 eV.en_US
dc.language.isoen_USzh_TW
dc.publisherElsevier B.V.en_US
dc.relationSurface & Coatings Technology, Volume 205, Issue 23-24, Page(s) 5269-5277.en_US
dc.subjectTransparent conductive oxideen_US
dc.subjectAl-doped ZnOen_US
dc.subjectSputteringen_US
dc.subjectThin filmen_US
dc.titleEffects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputteringen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.surfcoat.2011.05.033zh_TW
dc.contributor.catalogerMiao-zhen Luoen_US
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en_US-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.openairetypeJournal Article-
item.fulltextno fulltext-
Appears in Collections:電機工程學系所
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