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|標題:||A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique||作者:||Yang, Ching-Yuan
|關鍵字:||Back-gate MOS;varied p-n junction capacitance;varied transconductance;voltage-controlled oscillator (VCO)||出版社:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.||Project:||IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, Volume 21, Issue 3, Page(s) 163-165.||摘要:||
Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 mu m CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n junction capacitance and the varied transconductance in the intrinsic-tuned regime, the VCO provides the tuning range of 9.95 to 11.05 GHz at a 0.6 V supply and dissipates below 4.35 mW. At 11 GHz carrier frequency, the measured phase noise is -110.4 dBc/Hz at a 1 MHz offset.
|Appears in Collections:||電機工程學系所|
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