Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43849
標題: A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique
作者: Yang, Ching-Yuan
Chang, Chih-Hsiang
Lin, Jung-Mao
Weng, Jun-Hong
關鍵字: Back-gate MOS;varied p-n junction capacitance;varied transconductance;voltage-controlled oscillator (VCO)
出版社: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.
Project: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, Volume 21, Issue 3, Page(s) 163-165.
摘要: 
Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 mu m CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n junction capacitance and the varied transconductance in the intrinsic-tuned regime, the VCO provides the tuning range of 9.95 to 11.05 GHz at a 0.6 V supply and dissipates below 4.35 mW. At 11 GHz carrier frequency, the measured phase noise is -110.4 dBc/Hz at a 1 MHz offset.
URI: http://hdl.handle.net/11455/43849
ISSN: 1531-1309
DOI: 10.1109/LMWC.2010.2102011
Appears in Collections:電機工程學系所

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