Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43860
標題: Determination of the diffusion coefficient of proton in CVD gamma aluminum oxide thin films
作者: Yu, G.T.
顏秀崗
Yen, S.K.
關鍵字: thin film;aluminum oxide;proton;diffusion coefficient;hydrogen;iron;naoh
Project: Surface & Coatings Technology
期刊/報告no:: Surface & Coatings Technology, Volume 166, Issue 2-3, Page(s) 195-200.
摘要: 
Proton diffusion in aluminum oxide thin films is of significant interest because of its importance in barrier, sensor and catalytic coating applications. In this study, a novel method based on potential-pH response measurement was used to determine proton diffusivity in CVD produced gamma aluminum oxide thin films. This technique based on the model of diffusion-controlled transport at the oxide surface, measures the potential-pH response drift as a stepwise increase and decrease in pH (i.e. pH 4 and 7) with a thermostatic measurement set-up. The drift in the potential-pH response is believed to be due to the surface layer, which affects proton diffusion onto the oxide film of the Al2O3-gate ion selective field effect transistor. The diffusion coefficient of proton in aluminum oxide thin film using the potential-pH response method was 6.5 X 10(-18) cm(2) /s. The unique feature of this method is its relatively simple experimental procedure, which eliminates complications arising from surface related effects and/ or presence of hydrogen traps in the metal, also offers a considerable reduction in test time with the experiment being completed in 10 h as compared to the conventional electrochemical permeation method which takes as long as 5 days. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43860
ISSN: 0257-8972
DOI: 10.1016/s0257-8972(02)00781-8
Appears in Collections:材料科學與工程學系

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