Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43877
標題: Impact of Strain Engineering on Nanoscale Strained In GaAs MOSFET Devices
作者: Lee, Chang-Chun
Chang, Shu-Tong
P.-H.Sun
C.-X.Huang
關鍵字: InGaAs Alloy;Stress;Mobility;TCAD Simulation
出版社: AMER SCIENTIFIC PUBLISHERS.
Project: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Volume 11, Issue 7, Page(s) 5623-5627.
摘要: 
The strain distributions in the In(0.53)Ga(0.47)As channel regions of the In(0.4)Ga(0.6)As source/drain (S/D) with various lengths and widths were studied via 3D process simulations. The resulting mobility improvement was analyzed. The tensile strain along the transport direction was found to dominate the mobility improvement. The strain along the vertical direction perpendicular to the gate oxide was found to affect the mobility the least, while the strain along the width direction was slightly degraded. The impact of the channel width and length on the performance improvement, such as on the mobility gain, was analyzed via TOAD simulations. The novelty of this paper stems from its study of the impact of the channel width and length on the performance of In GaAs NMOSFETs, such as on their mobility gain, and from its exploration of physical insights for scaling the future III-V MOS devices.
URI: http://hdl.handle.net/11455/43877
ISSN: 1533-4880
DOI: 10.1166/jnn.2011.4341
Appears in Collections:電機工程學系所

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