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|標題:||Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs||作者:||Hsieh, Bing-Fong
|關鍵字:||Strained Ge;Subband;Effective mass;Mobility||出版社:||PERGAMON-ELSEVIER SCIENCE LTD.||Project:||SOLID-STATE ELECTRONICS, Volume 60, Issue 1, Page(s) 37-41.||摘要:||
Effective mass and mobility of strained Ge (1 1 0) inversion layer in PMOSFET are studied theoretically in this paper. The strain condition considered in the calculations is the intrinsic strain resulting from growing the Ge layer on the (1 1 0) Si substrate. The quantum confinement effect resulting from the vertical effective electric field is incorporated into the k . p calculation. Various effective masses, such as quantization effective mass, m(z) density of states effective mass, m(DOS), and conductivity mass, m(c), as well as the hole mobility of strained Ge (1 1 0) inversion layer for PMOS under substrate strain and various effective electric field strengths are all investigated.
|Appears in Collections:||電機工程學系所|
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