Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs

Abstract

Effective mass and mobility of strained Ge (1 1 0) inversion layer in PMOSFET are studied theoretically in this paper. The strain condition considered in the calculations is the intrinsic strain resulting from growing the Ge layer on the (1 1 0) Si substrate. The quantum confinement effect resulting from the vertical effective electric field is incorporated into the k . p calculation. Various effective masses, such as quantization effective mass, m(z) density of states effective mass, m(DOS), and conductivity mass, m(c), as well as the hole mobility of strained Ge (1 1 0) inversion layer for PMOS under substrate strain and various effective electric field strengths are all investigated.