Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43880
標題: Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs
作者: Hsieh, Bing-Fong
Chang, Shu-Tong
關鍵字: Strained Ge;Subband;Effective mass;Mobility
出版社: PERGAMON-ELSEVIER SCIENCE LTD.
Project: SOLID-STATE ELECTRONICS, Volume 60, Issue 1, Page(s) 37-41.
摘要: 
Effective mass and mobility of strained Ge (1 1 0) inversion layer in PMOSFET are studied theoretically in this paper. The strain condition considered in the calculations is the intrinsic strain resulting from growing the Ge layer on the (1 1 0) Si substrate. The quantum confinement effect resulting from the vertical effective electric field is incorporated into the k . p calculation. Various effective masses, such as quantization effective mass, m(z) density of states effective mass, m(DOS), and conductivity mass, m(c), as well as the hole mobility of strained Ge (1 1 0) inversion layer for PMOS under substrate strain and various effective electric field strengths are all investigated.
URI: http://hdl.handle.net/11455/43880
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.01.028
Appears in Collections:電機工程學系所

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