Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43883
標題: Improved light extraction in AlGaInP-based LEDs using a roughened window layer
作者: Horng, R.H.
吳宗明
Wu, T.M.
Wuu, D.S.
洪瑞華
武東星
關鍵字: emitting-diodes;natural lithography;efficiency
Project: Journal of the Electrochemical Society
期刊/報告no:: Journal of the Electrochemical Society, Volume 155, Issue 10, Page(s) H710-H715.
摘要: 
Surface-textured p-GaP/AlGaInP/GaAs light-emitting diodes (LEDs) have been fabricated using a combination of natural lithography and dry etching techniques. Here, the randomly positioned polystyrene spheres are used as a mask for dry etching. The p-GaP window layer was successfully etched to achieve nanopillars on its surface. It was found that the surface-textured LEDs with the p-GaP nanopillars revealing a diameter of 300-320 nm, a density of 1.4 x 10(9) cm(-2), and a depth of 550-650 nm have maximum luminance intensity. Output power of the surface-textured LED increased about 70% compared with the planar-surface LED at a forward current of 20 mA. The LED window with nanopillar diameter (300-320 nm, half of wavelength) and depth (600 nm, similar to wavelength) resulting in much light extraction compared with flat-surface LEDs or deeper nanopillars has been demonstrated by experiment and simulation. After a 1000 h aging test, luminance intensity and voltage fluctuation do not exceed +/- 10%. These results indicated that AlGaInP-based LEDs with a roughened surface did not exhibit deteriorated performance.
URI: http://hdl.handle.net/11455/43883
ISSN: 0013-4651
DOI: 10.1149/1.2957905
Appears in Collections:材料科學與工程學系

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