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標題: InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process
作者: Lin, C.F.
Lin, C.M.
Yang, C.C.
Wang, W.K.
Huang, Y.C.
Chen, J.A.
Horng, R.H.
關鍵字: aluminium compounds;buffer layers;etching;III-V semiconductors;indium compounds;laser materials processing;light emitting diodes;surface structure;nitride-based leds;extraction-efficiency;photonic crystal;gan;surface;output;blue;enhancement;oxidation;devices
Project: Electrochemical and Solid State Letters
期刊/報告no:: Electrochemical and Solid State Letters, Volume 12, Issue 7, Page(s) H233-H237.
The InGaN-based light-emitting diodes (LEDs) were fabricated through a crystallographic etching process to increase their light extraction efficiency. After the laser scribing and the selective lateral wet etching processes at the LED chip edge region, the stable crystallographic etching planes were formed as the GaN {1012e} planes and had an including angle with the top GaN (0001) plane measured as 40.3 degrees. The AlN buffer layer acted as the sacrificial layer for the lateral wet process with a 27.5 mu m/h etching rate. The continuous cone-shaped sidewall (CSS) structure of the treated LED has a larger light-scattering area and higher light extraction cones around the LED chips. The LED with the CSS structure around the chip edge region has a higher light output power compared to a conventional LED when measured in LED chip form.
ISSN: 1099-0062
DOI: 10.1149/1.3118503
Appears in Collections:材料科學與工程學系

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