Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43896
標題: High-quality InGaN/GaN heterojunctions and their photovoltaic effects
作者: Zheng, X.H.
洪瑞華
Horng, R.H.
Wuu, D.S.
Chu, M.T.
Liao, W.Y.
Wu, M.H.
Lin, R.M.
Lu, Y.C.
武東星
關鍵字: electrical conductivity;gallium compounds;III-V semiconductors;indium;compounds;leakage currents;MOCVD;photoluminescence;photovoltaic;cells;photovoltaic effects;semiconductor epitaxial layers;semiconductor heterojunctions;wide band gap semiconductors;X-ray;diffraction;fundamental-band gap;inn;thickness
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 93, Issue 26.
摘要: 
High-quality p-GaN/i-In(0.1)Ga(0.9)N/n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellosung fringes around the InGaN peak in high-resolution x-ray diffraction (HRXRD) confirm a sharp interface between InGaN and GaN films. The corresponding HRXRD and photoluminescence measurements demonstrate that there is no observable phase separation. The improvement in crystal quality yields high-performance photovoltaic cells with open-circuit voltage of around 2.1 eV and fill factor up to 81% under standard AM 1.5 condition. The dark current-voltage measurements show very large shunt resistance, implying an insignificant leakage current in the devices and therefore achieving the high fill factor in the illuminated case.
URI: http://hdl.handle.net/11455/43896
ISSN: 0003-6951
DOI: 10.1063/1.3056628
Appears in Collections:材料科學與工程學系

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