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標題: | High-quality InGaN/GaN heterojunctions and their photovoltaic effects | 作者: | Zheng, X.H. 洪瑞華 Horng, R.H. Wuu, D.S. Chu, M.T. Liao, W.Y. Wu, M.H. Lin, R.M. Lu, Y.C. 武東星 |
關鍵字: | electrical conductivity;gallium compounds;III-V semiconductors;indium;compounds;leakage currents;MOCVD;photoluminescence;photovoltaic;cells;photovoltaic effects;semiconductor epitaxial layers;semiconductor heterojunctions;wide band gap semiconductors;X-ray;diffraction;fundamental-band gap;inn;thickness | Project: | Applied Physics Letters | 期刊/報告no:: | Applied Physics Letters, Volume 93, Issue 26. | 摘要: | High-quality p-GaN/i-In(0.1)Ga(0.9)N/n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellosung fringes around the InGaN peak in high-resolution x-ray diffraction (HRXRD) confirm a sharp interface between InGaN and GaN films. The corresponding HRXRD and photoluminescence measurements demonstrate that there is no observable phase separation. The improvement in crystal quality yields high-performance photovoltaic cells with open-circuit voltage of around 2.1 eV and fill factor up to 81% under standard AM 1.5 condition. The dark current-voltage measurements show very large shunt resistance, implying an insignificant leakage current in the devices and therefore achieving the high fill factor in the illuminated case. |
URI: | http://hdl.handle.net/11455/43896 | ISSN: | 0003-6951 | DOI: | 10.1063/1.3056628 |
Appears in Collections: | 材料科學與工程學系 |
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