Please use this identifier to cite or link to this item:
|標題:||High-quality InGaN/GaN heterojunctions and their photovoltaic effects||作者:||Zheng, X.H.
|關鍵字:||electrical conductivity;gallium compounds;III-V semiconductors;indium;compounds;leakage currents;MOCVD;photoluminescence;photovoltaic;cells;photovoltaic effects;semiconductor epitaxial layers;semiconductor heterojunctions;wide band gap semiconductors;X-ray;diffraction;fundamental-band gap;inn;thickness||Project:||Applied Physics Letters||期刊/報告no：:||Applied Physics Letters, Volume 93, Issue 26.||摘要:||
High-quality p-GaN/i-In(0.1)Ga(0.9)N/n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellosung fringes around the InGaN peak in high-resolution x-ray diffraction (HRXRD) confirm a sharp interface between InGaN and GaN films. The corresponding HRXRD and photoluminescence measurements demonstrate that there is no observable phase separation. The improvement in crystal quality yields high-performance photovoltaic cells with open-circuit voltage of around 2.1 eV and fill factor up to 81% under standard AM 1.5 condition. The dark current-voltage measurements show very large shunt resistance, implying an insignificant leakage current in the devices and therefore achieving the high fill factor in the illuminated case.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.