Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43898
標題: Improved thermal management of GaN/sapphire light-emitting diodes embedded in reflective heat spreaders
作者: Horng, R.H.
洪瑞華
Chiang, C.C.
Hsiao, H.Y.
Zheng, X.
Wuu, D.S.
Lin, H.I.
武東星
關鍵字: laser lift-off;high-power;fabrication;gan
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 93, Issue 11.
摘要: 
Using maskless lithography and electroforming techniques, we have demonstrated an enhanced performance of GaN/sapphire light-emitting diode (LED) embedded in a reflective copper heat spreader. The chip size and dominant wavelength of the blue emitter used in this research is 1 X 1 mm(2) and 455 nm, respectively. The cup-shaped LED heat sink is electroformed on sapphire directly using the spin-coated photoresist coated with the Au/Cr/Ag mirror as a mold and dicing into the embedded LED with a Cu base dimension of 3 X 3 mm(2), which effectively enhances the heat dissipation down to the metal frame and reaps the light flux generated from the side emission. With the aid of a reflective heat spreader, the encapsulated LED sample driven at 1 A yields the light output power of 700 mW and around 2.7-times increase in the wall-plug efficiency compared to that of the conventional GaN/sapphire LED. Infrared thermal images confirm the GaN/sapphire LED with more efficient heat extraction and better temperature uniformity. These results exhibit an alternative solution to thermal management of high power LED-on-sapphire samples besides the laser lift-off technique. (C) 2008 American Institute of Physics.
URI: http://hdl.handle.net/11455/43898
ISSN: 0003-6951
DOI: 10.1063/1.2983740
Appears in Collections:材料科學與工程學系

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