Please use this identifier to cite or link to this item:
|標題:||Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector||作者:||Horng, R.H.
|關鍵字:||output power;mqw leds;surface;efficiency||Project:||Applied Physics Letters||期刊/報告no：:||Applied Physics Letters, Volume 93, Issue 2.||摘要:||
Light extraction enhancement of InGaN-GaN light-emitting diode (LED) is demonstrated with double-side roughening both on the p-GaN surface and the micropillar undoped GaN as well as an omnidirectional reflector via patterning sapphire substrate, wafer-bonding, laser lift-off, and chemical wet etching technologies. This device design enhances the light output power up to 77% compared to the conventional LED with a single roughened p-GaN on patterned sapphire substrate at an injection current of 350 mA. Due to the employment of Si carrier, the junction temperature measurement at 350 mA yields a 46.6 degrees C lower than that of the conventional LEDs. (C) 2008 American Institute of Physics.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.