Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43900
標題: Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector
作者: Horng, R.H.
洪瑞華
Zheng, X.
Hsieh, C.Y.
Wuu, D.S.
武東星
關鍵字: output power;mqw leds;surface;efficiency
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 93, Issue 2.
摘要: 
Light extraction enhancement of InGaN-GaN light-emitting diode (LED) is demonstrated with double-side roughening both on the p-GaN surface and the micropillar undoped GaN as well as an omnidirectional reflector via patterning sapphire substrate, wafer-bonding, laser lift-off, and chemical wet etching technologies. This device design enhances the light output power up to 77% compared to the conventional LED with a single roughened p-GaN on patterned sapphire substrate at an injection current of 350 mA. Due to the employment of Si carrier, the junction temperature measurement at 350 mA yields a 46.6 degrees C lower than that of the conventional LEDs. (C) 2008 American Institute of Physics.
URI: http://hdl.handle.net/11455/43900
ISSN: 0003-6951
DOI: 10.1063/1.2961008
Appears in Collections:材料科學與工程學系

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