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標題: | Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector | 作者: | Horng, R.H. 洪瑞華 Zheng, X. Hsieh, C.Y. Wuu, D.S. 武東星 |
關鍵字: | output power;mqw leds;surface;efficiency | Project: | Applied Physics Letters | 期刊/報告no:: | Applied Physics Letters, Volume 93, Issue 2. | 摘要: | Light extraction enhancement of InGaN-GaN light-emitting diode (LED) is demonstrated with double-side roughening both on the p-GaN surface and the micropillar undoped GaN as well as an omnidirectional reflector via patterning sapphire substrate, wafer-bonding, laser lift-off, and chemical wet etching technologies. This device design enhances the light output power up to 77% compared to the conventional LED with a single roughened p-GaN on patterned sapphire substrate at an injection current of 350 mA. Due to the employment of Si carrier, the junction temperature measurement at 350 mA yields a 46.6 degrees C lower than that of the conventional LEDs. (C) 2008 American Institute of Physics. |
URI: | http://hdl.handle.net/11455/43900 | ISSN: | 0003-6951 | DOI: | 10.1063/1.2961008 |
Appears in Collections: | 材料科學與工程學系 |
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