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|標題:||Repeated Growing and Annealing Towards ZnO Film by Metal-Organic CVD||作者:||Wu, C.C.
|關鍵字:||Annealing;Film;Metal-organic CVD;Repeated growing and annealing;ZnO;chemical-vapor-deposition;structural-properties;sapphire substrate;thin-films;growth;mocvd;nanostructures;epitaxy||Project:||Chemical Vapor Deposition||期刊/報告no：:||Chemical Vapor Deposition, Volume 15, Issue 7-9, Page(s) 234-241.||摘要:||
ZnO deposited on sapphire substrate is investigated as a function of growth temperature in the range 350 similar to 650 degrees C. The surface morphology of ZnO structures changes significantly with increasing growth temperature. Though ZnO crystal quality and optical property can be improved under high growth temperature, ZnO is inclined to form nanostructures. Therefore, we propose the repeated growing and annealing (RGA) growth mode as a reliable and reproducible way for the growth of ZnO film. The RGA growth mode is performed at a growth temperature of 450 degrees C for 8 min, an anneal temperature of 650 degrees C for 20 min, and repeatedly switched between growing and annealing. Meanwhile, we compare the effects of annealing under Ar, N(2), and O(2), and found that a low resistivity of 3.4 x 10(-3) Omega cm and a high mobility of 85.2 cm(2) V(-1) s(-1) can be obtained annealing under N(2).
|Appears in Collections:||材料科學與工程學系|
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